| 摘要 |
After a HEMT is formed, side walls are formed on a semiconductor substrate. Next, a sacrificial layer is formed to cover the HEMT. Next, contact holes are formed in the sacrificial layer to expose upper surfaces of source electrodes. Next, a metal interconnect line is formed by patterning a metal film formed on the entire top surface. Next, slits are formed in the metal interconnect line to partially expose an upper surface of the sacrificial layer. After the sacrificial layer is dissolved, the dissolved sacrificial layer is discharged through the slits to the outside. An air space is formed as a result of the removal of the sacrificial layer.
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