| 摘要 |
<P>PROBLEM TO BE SOLVED: To read the stored data at high speed even if the electrical property change is small caused by presence/absence of the stored data in a nonvolatile memory mounting various types. <P>SOLUTION: For example, one of the bit lines 13 laid in a column direction is made a reference bit line RBL in the memory cell array 10 with anti-fuse elements 11 arranged in a grid pattern. After pre-charging, to a high voltage, the reference bit line and the normal bit line connected with anti-fuse elements to be read, this memory starts to draw charges from the reference bit line by a current a little smaller than from the normal bit line when starting to draw charges by a certain current from the normal bit line. It reads the data actually stored in the anti-fuse elements depending on which of the bit lines first becomes lower than the reference potential. <P>COPYRIGHT: (C)2008,JPO&INPIT |
