发明名称 RIBBON-LIKE BETA-Ga2O3 TUBE WITH CYLINDRICAL INTERNAL PASSAGE FILLED UP WITH TIN NANOWIRE
摘要 PROBLEM TO BE SOLVED: To provide a ribbon-likeβ-Ga<SB>2</SB>O<SB>3</SB>tube filled with tin nanowires to be used to an electron beam irradiation- or a heat-driven type electronic switch. SOLUTION: This ribbon-likeβ-Ga<SB>2</SB>O<SB>3</SB>tube filled up with tin nanowires is fabricated via the following steps: 1. A mixture of GaN and SnO is placed on an alumina tray (or boat) 2 in the central region of an alumina cylindrical pipe 6 in a horizontal high-temperature vacuum furnace 1; 2. Silicon wafers 3 are placed as substrates on an alumina plate 4, which is inserted downstream of the alumina cylindrical pipe 6; 3. The pipe 6 is pumped down to a base pressure of the device with a vacuum pump; 4. A constant flow of Ar mixed with H<SB>2</SB>is introduced into the alumina cylindrical pipe 6; 5. The furnace 1 is heated to approximately 900°C; 6. The furnace 1 is further heated to approximately 1,200°C; 7. The furnace 1 is cooled to room temperature; 8. The products are collected from the silicon wafers 3. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009131906(A) 申请公布日期 2009.06.18
申请号 JP20070230221 申请日期 2007.09.05
申请人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 HU JUNQING;ZHAN JINHUA;DEMITRY GOLBERG;BANDO YOSHIO
分类号 B82B1/00;B82B3/00;C01G15/00 主分类号 B82B1/00
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