Electrode body, wiring substrate, and semiconductor device

摘要

An electrode body is provided as an electrode body capable of appropriately reducing a load when silicon wafer direct bonding is performed. The electrode body 1 includes a base member 10 that has a predetermined thickness; and an electrode portion 20 that is formed on one surface of the base member in a thickness direction thereof. The electrode portion 20 includes a basic bump 21 formed in a substantially columnar shape to protrude on the base member 10 and a fragile bump 22 formed independently from the basic bump to form a metallic bond with the basic bump 21.

主权项

1. An electrode body forming method comprising the steps of:
forming a base member having a predetermined thickness; and forming a plurality of electrode portions on one surface of the base member in a thickness direction of the base member, wherein the step of forming the plurality of electrode portions comprises the steps of: forming a plurality of basic bumps that are formed to protrude on the base member, each of the plurality of the basic bumps being formed in a substantially columnar shape, and forming one or more fragile bumps that are formed on an upper surface of each of the basic bumps, independently from the basic bump, wherein a metallic bond is formed between the fragile bumps and the basic bump on which the fragile bumps are formed, wherein the fragile bumps and the basic bumps are formed of the same material, and wherein a height of each fragile bump is equal to or greater than a height irregularity of the basic bumps.