发明名称 Recording mark formation in a phase change memory material via a predominately capacitive cooling process
摘要 Methods of writing information to an optical memory device. The methods comprise the step of writing a mark to the active material of the optical memory device by irradiating the material with an applied energy source. In one embodiment, the applied energy source provides a plurality of energy pulses. In another embodiment, energy in excess of that required to form a mark is released and dissipated in a manner that minimizes mark enlargement, spurious mark formation, recrystallization and back crystallization. The methods are effective to provide better cooling characteristics through enhancement of the capacitive cooling contribution.
申请公布号 US7012874(B2) 申请公布日期 2006.03.14
申请号 US20010026395 申请日期 2001.12.21
申请人 ENERGY CONVERSION DEVICES, INC. 发明人 TSU DAVID
分类号 G11B7/00;G11B7/0045;G11B7/006;G11B7/013;G11B7/125 主分类号 G11B7/00
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