Overvoltage protection device and method

摘要

A protection device is provided that exhibits a turn on time of order of one nanosecond or less. Such a device provides enhanced protection for integrated circuits against electrostatic discharge events. This in turn reduces the risk of device failure in use. The protection device can include a bipolar transistor structure connected between a node to be protected and a discharge path.

主权项

1. An overvoltage protection device comprising:
a bipolar transistor structure connected between a node to be protected and a discharge path, wherein the bipolar transistor structure comprises:
a semiconductor layer;a base region in the semiconductor layer;a collector region in the semiconductor layer;an emitter region in the semiconductor layer, wherein the collector region and the emitter region are adjacent to one another, wherein the collector region, the base region, and the emitter region are configured to operate as a lateral bipolar transistor; anda field plate above a portion of the semiconductor layer between the collector region and the emitter region, wherein the field plate is electrically connected to the collector region, the emitter region, or the node to be protected.