| 摘要 |
PROBLEM TO BE SOLVED: To provide a trench-gate semiconductor device in which a feedback capacitance is reduced and the complexity of the manufacturing processes of a gate insulating film is suppressed.SOLUTION: A semiconductor device comprises: a first-conductivity-type first semiconductor region; a second-conductivity-type second semiconductor region disposed on the first semiconductor region; a first-conductivity-type third semiconductor region disposed on the second semiconductor region; an insulation film disposed on a bottom surface and a side surface of a groove that extends from the upper surface of the third semiconductor region to the first semiconductor region through the third semiconductor region and the second semiconductor region; and a control electrode disposed in a band shape along a region facing at least the second semiconductor region in the residual region of the region facing the first semiconductor region, on the insulation film on the side surface of the groove. |
