SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A semiconductor light emitting device includes: an n-type layer; a p-type layer; and an emission layer interposed between the n-type layer and the p-type layer and having a multiple quantum well (MQW) structure in which barrier layers and quantum well layers are alternately stacked over a plurality of periods, wherein n-type impurity concentrations of the barrier layers disposed up to a predetermined α-th layer (where a is a natural number), when counting from the p-type layer, are smaller than an n-type impurity concentration of the barrier layer disposed at an (α+1)-th layer counting from the p-type layer.

主权项

1. A semiconductor light emitting device, comprising:
an n-type layer; a p-type layer; and an emission layer interposed between the n-type layer and the p-type layer and having a multiple quantum well (MQW) structure in which barrier layers and quantum well layers are alternately stacked over a plurality of periods, wherein n-type impurity concentrations of the barrier layers disposed up to a predetermined α-th layer (where a is a natural number), when counting from the p-type layer, are smaller than an n-type impurity concentration of the barrier layer disposed at an (α+1)-th layer counting from the p-type layer.