Vertical PN silicon modulator

摘要

A silicon waveguide comprising a waveguide core that comprises a first positively doped (P1) region vertically adjacent to a second positively doped (P2) region. The P2 region is more heavily positively doped than the P1 region. A first negatively doped (N1) region is vertically adjacent to a second negatively doped (N2) region. The N2 region is more heavily negatively doped than the N1 region. The N2 region and the P2 region are positioned vertically adjacent to form a positive-negative (PN) junction. The N1 region, the N2 region, the P1 region, and the P2 region are positioned as a vertical PN junction and configured to completely deplete the P2 region of positive ions and completely deplete the N2 region of negative ions when a voltage drop is applied across the N1 region, the N2 region, the P1 region, and the P2 region.

主权项

1. An optical modulator comprising:
a silicon waveguide comprising a waveguide core that comprises:
a first positively doped (P1) region vertically adjacent to a second positively doped (P2) region such that the P2 region is more heavily positively doped than the P1 region; anda first negatively doped (N1) region vertically adjacent to a second negatively doped (N2) region such that the N2 region is more heavily negatively doped than the N1 region, wherein the N2 region and the P2 region are positioned vertically adjacent to form a positive-negative (PN) junction; at least one cathode; and at least one anode selectively electrically coupled to the cathode across the waveguide core via the PN junction such that a voltage drop applied between the cathode and the anode modulates an optical carrier passing through the PN junction by changing a refractive index of the waveguide core, wherein the P2 region is smaller than the P1 region and the N2 region is smaller than the N1 region such that the P2 and N2 regions have a greater effect on the refractive index change than the P1 and N1 regions, and such that the P1 and N1 regions have a lesser effect on optical loss of the optical carrier than the P2 and N2 regions, and wherein the P1 region extends laterally without progressing to the anode and the N1 region extends laterally without processing to the cathode.