发明名称 ALLOY TARGET FOR SPUTTERING, AND PRODUCTION METHOD OF ALLOY TARGET FOR SPUTTERING
摘要 PROBLEM TO BE SOLVED: To provide an alloy target for sputtering capable of having an optical characteristic for applying as a blackened layer of a conductive substrate, and having an etching property capable of etching simultaneously with a wiring layer.SOLUTION: In an alloy target for sputtering produced by a dissolution method, and comprising a dissolved alloy containing copper, nickel and tungsten, a composition of the dissolved alloy has tungsten as much as 2 atom% or more and 16 atom% or less, nickel as much as 20 atom% or more and 90 atom% or less, and a residue constituted of copper.SELECTED DRAWING: Figure 1
申请公布号 JP2016216795(A) 申请公布日期 2016.12.22
申请号 JP20150105716 申请日期 2015.05.25
申请人 SUMITOMO METAL MINING CO LTD 发明人 TAKATSUKA YUJI;TOGASHI AKIRA;SUDO SHINGO
分类号 C23C14/34;B22D1/00;B22D21/00;B22D27/20;C22C9/06;C22C19/03 主分类号 C23C14/34
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