| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a short circuit between neighboring bit lines is inhibited and an interlayer insulation film is smooth polished.SOLUTION: A semiconductor device comprises: a memory cell region where resistive recording elements RM are arranged; and a peripheral circuit region arranged around the memory cell region in planar view. the resistive recording element RM includes a first metal electrode MO1, an insulation film IS and a second metal electrode MO2. The semiconductor device comprises a plurality of first interconnections BL which are provided on the resistive recording elements RM and extend in a direction along a principal surface. In the peripheral circuit region, a lamination structure DMM in which a layer composed of a material having a quality the same with that of the first metal electrode MO1, a layer composed of a material having a quality the same with that of the insulation film IS and a layer composed of a material having a quality the same with that of the second metal electrode MO2 are laminated is arranged so as to overlap second interconnections BL2 composed of the same layer with the first interconnections BL in plan view. The lamination structure DMM does not overlap both of a pair of neighboring second interconnections BL2 in the peripheral circuit region in plan view. |
