| 摘要 |
PURPOSE:To obtain the titled device permitting epitaxial growth with high uniformity by a constitution wherein a wing shaped bed is supported by a front shaft and a hind shaft, the suspending force exerted on the wire for suspending said shafts is detected and fed back for controlling. CONSTITUTION:A horizontal reaction tube (not shown in the drawing) is heated and stream of reaction gas 5 is passed therethrough and an epitaxial growth layer is grown on a semiconductor substrate 2 placed on a wing shaped bed 3 supported vertically movably by the front shaft 6 and a hind shaft 7 by the vapor growth process. In this process, said front shaft 6 and said hind shaft 7 are suspended each by a wire 16, and a balancing weight 9 is connected to either one of the wires 16. The suspnding force exerted on another wire 16 is sensed by a dynamic lift checking device 19, and the suspending force of the wire 16 is controlled by a feeding pack device 20 basing on the sensed value. By this method, the stream 5 of the reaction gas is made to a stable laminar stream contg. no eddy current, thus, grown film having uniform film thickness and film qulity is prepd. efficiently. |
