发明名称 PATTERN FORMING METHOD
摘要 PURPOSE:To obtain a pattern perpendicular in side walls and high in dimensional precision by forming a negative type photosensitive resin film on a substrate, patternwise exposing this film, and subjecting it to short-time preliminary development using a developing solution higher in alkali concentration immediately before its main development using a developing solution lower in the alkali concentration than the preceding development. CONSTITUTION:The negative type photosensitive resin film 3 is formed on the substrate 1, patternwise exposed, and subjected to the short-time preliminary development using the developing solution higher in the alkali concentration immediately before the main development using the developing solution lower in the alkali concentration, thus permitting a layer formed on more hardly soluble in the alkaline developing solution to be removed and the obtained pattern to be high in dimensional precision and perpendicular in the profiles of the side walls.
申请公布号 JPH0426851(A) 申请公布日期 1992.01.30
申请号 JP19900131342 申请日期 1990.05.23
申请人 TOSHIBA CORP 发明人 KUMAGAI AKITOSHI;SATO KAZUO;NAKASE MAKOTO
分类号 G03F7/30;G03F7/38;H01L21/027;H01L21/30 主分类号 G03F7/30
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