| 摘要 |
The invention relates to a monolithically integrated circuit arrangement, in which, according to the invention, the substrate (111) is connected via at least one transistor (T12) using the collector-emitter path of the latter to the most negative potential in each case and, in the case of a p-type (hole-type) conducting substrate, the transistor (T12) is a npn transistor. The collector of the transistor (T12) is connected to the corresponding land and the emitter is connected to the substrate (111). This circuitry measure allows any chosen number of islands to be brought to different potentials below the negative supply voltage, without functional disruption or destruction of the circuit. Similarly, it is possible to operate such a circuit with different earth potentials. <IMAGE> |
