| 摘要 |
PURPOSE:To furnish a semiconductor device which can make a breakdown current withstand amount about ten times larger than usual ones. CONSTITUTION:The lifetime tau2 of a part L2 other than a main current passage part L1 is made shorter than the lifetime tau1 of the main current passage part L1 by a lifetime control means of heavy metal diffusion or the like. Thereby a semiconductor device of which the breakdown current withstand amount is large can be obtained by a simple means without impairing a forward voltage drop characteristic and others of a diode, a thyristor and the like. The lifetimes are made to be tau1<tau2. |
