| 摘要 |
PURPOSE:To provide a compound semiconductor integrated circuit device equipped with a MESFET and a Schottky barrier diode element, where the MESFET is enhanced in a variable range of gate bias and the Schottky barrier diode element is prevented from changing in Schottky barrier height with time. CONSTITUTION:A gate electrode 5 of a MESFET is formed of aluminum foil film, and an anode electrode 8 of a Schottky barrier diode element is formed of a laminate 8 composed of a barrier metal layer (for instance, Ti film) 6 and an aluminum film 7. |
