HIGH ELECTRON MOBILITY FIELD EFFECT SEMICONDUCTOR DEVICE,申请号JP19920237933-传众专利搜索

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发明名称	HIGH ELECTRON MOBILITY FIELD EFFECT SEMICONDUCTOR DEVICE
摘要
申请公布号	JPH0684959(A)	申请公布日期	1994.03.25
申请号	JP19920237933	申请日期	1992.09.07
申请人	FUJITSU LTD	发明人	SAITO JUNJI
分类号	H01L29/812;H01L21/338;H01L29/778;(IPC1-7):H01L21/338	主分类号	H01L29/812
代理机构		代理人
主权项
地址

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