发明名称 |
Method of bandgap tuning of semiconductor quantum well structures |
摘要 |
A method of selectively tuning the bandedge of a semiconductor heterostructure includes repeatedly forming a disordered region that is spatially separated from a quantum well active region and subsequently annealing the heterostructure each time after the disordered region is formed, so that vacancies/defects in the disordered region diffuse into the quantum well region and enhance interdiffusion at the well-barrier heterojunctions. Repeating, the disordering followed by annealing allows for a greater range in bandgap tuning. The heterostuctures of interest are IH-V material systems, such as AlGaAs/GaAs, where the active region includes structures such as a single quantum well, a multiple quantum well, or a superlattice.
|
申请公布号 |
US5395793(A) |
申请公布日期 |
1995.03.07 |
申请号 |
US19930172094 |
申请日期 |
1993.12.23 |
申请人 |
NATIONAL RESEARCH COUNCIL OF CANADA |
发明人 |
CHARBONNEAU, SYLVAIN;KOTELES, EMIL S. |
分类号 |
G02B6/12;G02B6/134;H01L21/18;H01L21/20;H01S5/34;(IPC1-7):H01L21/20 |
主分类号 |
G02B6/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|