SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

A communication semiconductor device in which an HEMT having a frequency band of about 5 GHz is incorporated. The dielectric strength of the semiconductor against a surge current at the time of handling, etc., is prevented. The semiconductor device is provided with a semi-insulating compound semiconductor substrate (semi-insulating GaAs substrate), an electron traveling layer made of an undoped compound semiconductor (undoped GaAs) formed on the main surface of the semiconductor substrate, an electron supplying layer made of a compound semiconductor (AlGaAs) of a first conductivity (N-type) which is formed on the electron traveling layer and generates two-dimensional electron gas channels in the surface layer of the electron traveling layer, source and drain electrodes formed on the electron supplying layer, and a gate electrode formed on the upper surface of the electron supplying layer between the source and drain electrodes. An NiN protective element composed of an intrinsic semiconductor layer formed by partially etching off the electron supplying layer and part of the electron supplying layer is provided between the gate and source electrodes.