| 摘要 |
<p>A platinum film orientation-controlled to (111), (200) and/or (220) is provided by depositing the platinum film under an atmosphere containing an oxygen component such as O2, O3, N2O ,N2+O2, or mixtures thereof as well as an inert gas (Ar, Ne, Kr, or Xe) on a substrate heated to a temperature ranged from room temperature to 700 DEG C, and annealing to remove the gases introduced into the platinum film during the deposition thereof. The platinum film formed in this process has excellent electrical conductivity (resistivity is lower than 15 mu OMEGA -cm), good enough adhesion strength to be used for electronic devices, and does not show hillocks, voids or pinholes. <IMAGE></p> |
