发明名称 Semiconductor device comprising an internal wiring pattern
摘要 In a semiconductor device of the present invention and a production method thereof, an electronic circuit is provided in a semiconductor substrate (11), the electronic circuit having terminals. An internal wiring pattern (12) is provided in the substrate, the internal wiring pattern being connected to the electronic circuit terminals. A protective layer (14) is provided on the substrate, the protective layer covering the substrate. Vias (13) are provided on the substrate so as to project from the protective layer, the vias being connected to the internal wiring pattern at arbitrary positions on the substrate. An external wiring pattern (15) is provided on the protective layer, the external wiring pattern being connected to the vias. Projection electrodes (16) are connected to the external wiring pattern, the projection electrodes having a predetermined height above the external wiring pattern. An enclosure layer (17) of a resin material is provided on the protective layer, the enclosure layer covering sides of the projection electrodes and external surfaces of the external wiring pattern. <IMAGE>
申请公布号 EP1032041(A2) 申请公布日期 2000.08.30
申请号 EP20000300778 申请日期 2000.02.01
申请人 FUJITSU LIMITED 发明人 KAWAHARA, TOSHIMI;MATSUKI, HIROHISA;YONEDA, YOSHIYUKI;FUKASAWA, NORIO;HAMANAKA, YUZO;NAGASHIGE, KENICHI;SHINMA, YASUHIRO;HOZUMI, TAKASHI
分类号 H01L23/12;H01L21/60;H01L23/31;H01L23/485;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L23/12
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