METHOD FOR TREATING AND MODIFYING A TWO-STEP HYBRID SURFACE FOR IMPROVING AN OHMIC CONTACT OF A PHOTOELECTRIC/ELECTRONIC DEVICE

摘要

PURPOSE: A method for treating and modifying a two-step hybrid surface for improving an ohmic contact of a photoelectric/electronic device is to provide greatly improved specific contact resistance, by performing a treatment and a modification in a chemical solution or gas plasma before forming a metal thin film. CONSTITUTION: A surface of a mesa-etching semiconductor substrate is firstly processed in an acid or alkaline chemical solution and/or gas plasma. Right before an ohmic electrode metal is evaporated on the processed substrate, the surface of the firstly processed substrate is secondly processed in an acid or alkaline chemical solution and/or gas plasma.