INSULATION FILM, FORMING METHOD THEREOF AND SEMICONDUCTOR DEVICE USING THE INSULATION FILM

摘要

PROBLEM TO BE SOLVED: To provide an insulation film having a low carbon concentration therein, a forming method thereof and a high-reliability transistor using the film, in a plasma CVD using an organic silane gas oxidative gas as a raw material. SOLUTION: This insulation film is formed by plasma CVD, using an organic silane gas and oxidative gas as a low material at an organic silane gas to oxidative gas ratio of 4% or less or a substrate temp. of 400 deg.C or higher, and its in-film carbon concentration is 1×1020 atoms/cm3 or lower. The device has a gate insulation film, which or part of which is formed by the plasma CVD method using an organic silane gas or oxidative gas as a raw material, and its in-film carbon concentration is 1×1020 atoms/cm3 or lower. Thus it is possible to form a high reliability semiconductor device.