发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a vertical CCD in a photo diode all pixel general reading system wherein the questions that the photo resist exposure margin is small, wirings break at stepped parts, etc., are solved by realizing a three-phase driven charge coupled device with a two layer electrode structure. SOLUTION: In a charge coupled device having a first layer of polysilicon electrodes 2 formed through an insulation film on a semiconductor and a second layer of polysilicon electrodes 4 electrically insulated from the first layer of electrodes 2 and formed through an insulation film on the semiconductor, a charge transfer part is formed by pairing two polysilicon electrodes 2a, 2b in the first layer with one polysilicon electrode 4 in the second layer.
申请公布号 JP2000357790(A) 申请公布日期 2000.12.26
申请号 JP19990168089 申请日期 1999.06.15
申请人 NEC KYUSHU LTD 发明人 YAMAMOTO HIROMASA
分类号 H01L21/339;H01L27/148;H01L29/762;H04N5/335;H04N5/341;H04N5/369;H04N5/372;(IPC1-7):H01L29/762 主分类号 H01L21/339
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