发明名称 |
SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technology for manufacturing a semiconductor device having a greater integration density with a high yield. <P>SOLUTION: The semiconductor device is provided with a rectangular first resin body made of insulative resin; a second resin body that is made of insulative resin and is integrated by overlapping the second surface of the first resin body over the first surface thereof and integrating them together; a plurality of conductive leads that are located in the first resin body and of which tip end is located inside and is exposed over the second surface of the resin body and of which the other end is located on the peripheral surface of the first rein body and is exposed over the first surface of the first resin body; at least one first electronic part that is located in the first resin body and wherein an electrode is electrically connected with a lead; at least one second electronic part that is located in the second resin body and wherein an electrode is electrically connected with a lead exposing over the first surface of the first resin body; and an external electrode terminal that is formed in a lead part exposing over the second surface of the first resin body. <P>COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008091418(A) |
申请公布日期 |
2008.04.17 |
申请号 |
JP20060267963 |
申请日期 |
2006.09.29 |
申请人 |
ELPIDA MEMORY INC |
发明人 |
USAMI TOSHIHIKO;TAKESHIMA HIDEHIRO;SAGA TORU;WATANABE FUMITOMO |
分类号 |
H01L25/065;H01L21/56;H01L25/00;H01L25/07;H01L25/18 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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