| 摘要 |
At the wafer stage of a manufacturing process of magnetoresistive effect elements, the characteristics of the magnetoresistive effect elements can be correctly measured, fluctuations in the characteristics of the magnetoresistive effect elements can be suppressed, and highly reliable magnetoresistive effect elements can be manufactured with a high yield. A method of manufacturing a magnetoresistive effect element includes a process that forms terminals that electrically connect a lower shield layer on both sides of a final position of a air bearing surface and a process that forms terminals that electrically connect an upper shield layer on both sides of a final position of a air bearing surface.
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