SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME

摘要

On inferior electrode (8) there are superimposed titanium oxide film (10), nickel oxide film (11) and superior electrode (12). The above inferior electrode (8), titanium oxide film (10), nickel oxide film (11) and superior electrode (12) constitute resistor element (VR). The thickness of the titanium oxide film (10) is 5 nm, and that of the nickel oxide film (11) is 60 nm. The ratio of oxygen in nickel oxide constructing the nickel oxide film (11) is lower than the ratio of oxygen in stoichiometric composition.