发明名称 |
SOLID-STATE IMAGING DEVICE |
摘要 |
A solid-state imaging device includes first pixels and second pixels. Each of the first pixels and the second pixels includes a p-type diffusion layer formed in a semiconductor substrate and an n-type diffusion layer formed on the p-type diffusion layer. A first p-type implantation layer is formed on a surface side of the semiconductor substrate on the n-type diffusion layer of the first pixels. A second p-type implantation layer having a lower impurity concentration than the first p-type implantation layer or no p-type implantation layer is formed on a surface side of the semiconductor substrate on the n-type diffusion layer of the second pixels.
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申请公布号 |
US2009026571(A1) |
申请公布日期 |
2009.01.29 |
申请号 |
US20080103299 |
申请日期 |
2008.04.15 |
申请人 |
INAGAKI MAKOTO;KYOUGOKU MASANORI |
发明人 |
INAGAKI MAKOTO;KYOUGOKU MASANORI |
分类号 |
H01L31/058 |
主分类号 |
H01L31/058 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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