MEMS and CMOS integration with low-temperature bonding

摘要

The present disclosure relates to method of forming a MEMS device that mitigates the above mentioned difficulties. In some embodiments, the present disclosure relates to a method of forming a MEMS device, which forms one or more cavities within a first side of a carrier substrate. The first side of the carrier substrate is then bonded to a dielectric layer disposed on a micro-electromechanical system (MEMS) substrate, and the MEMS substrate is subsequently patterned to define a soft mechanical structure over the one or more cavities. The dielectric layer is then selectively removed, using a dry etching process, to release the one or more soft mechanical structures. A CMOS substrate is bonded to a second side of the MEMS substrate, by way of a bonding structure disposed between the CMOS substrate and the MEMS substrate, using a low-temperature bonding process.

主权项

1. A method of forming an integrated chip, comprising:
forming one or more cavities within a first side of a carrier substrate; bonding the first side of the carrier substrate to a dielectric layer disposed on a micro-electromechanical system (MEMS) substrate; selectively patterning the MEMS substrate to define one or more soft mechanical structures over the one or more cavities; selectively removing the dielectric layer using a dry etching process to release the one or more soft mechanical structures; and bonding a CMOS substrate to a second side of the MEMS substrate by way of a bonding structure disposed between the CMOS substrate and the MEMS substrate.