MULTI-STAGE ELEMENT REMOVAL USING ABSORPTION LAYERS

摘要

An MTJ structure and method for providing the same are described. The method may include providing a free layer, a pinned layer, and a nonmagnetic spacer layer between the free layer and the pinned layer. Providing the free layer and/or the pinned layer may include depositing a portion of the desired MTJ layer, depositing a sacrificial layer, annealing the MTJ and sacrificial layer, removing at least a portion of the sacrificial layer, and depositing a remaining portion of the desired MTJ layer. The steps of depositing a sacrificial layer, annealing, and removing the sacrificial layer may be repeated multiple times with process conditions selected for each stage so as to reduce the risk of damage to the underlying MTJ layer. The desired MTJ layer may be the free layer, the pinned layer, or both.

主权项

1. A method for providing a MTJ on a substrate, the method comprising:
providing a free layer that is switchable between a plurality of stable magnetic states; wherein providing the free layer includes:
depositing at least a first portion of the free layer;depositing a first sacrificial layer on the free layer;annealing at least the free layer and the first sacrificial layer at a first temperature to move an element from the free layer to the first sacrificial layer;removing at least a portion of the first sacrificial layer;depositing a second sacrificial layer on the free layer;annealing at least the free layer and the second sacrificial layer at a second temperature to move the element from the free layer to the second sacrificial layer; andremoving at least a portion of the second sacrificial layer.