发明名称 |
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR INTERFACIAL ANISOTROPY |
摘要 |
The present invention is directed to an MRAM element comprising a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic free layer structure has a variable magnetization direction substantially perpendicular to the layer plane thereof. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by a first non-magnetic perpendicular enhancement layer. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer plane thereof. The second magnetic reference layer has a multilayer structure comprising a first magnetic reference sublayer formed adjacent to the first non-magnetic perpendicular enhancement layer and a second magnetic reference sublayer separated from the first magnetic reference sublayer by an intermediate metallic layer. |
申请公布号 |
US2016211443(A1) |
申请公布日期 |
2016.07.21 |
申请号 |
US201615080208 |
申请日期 |
2016.03.24 |
申请人 |
Avalanche Technology, Inc. |
发明人 |
Gan Huadong;Huai Yiming;Wang Zihui;Zhou Yuchen |
分类号 |
H01L43/10;H01L43/08;G11C11/16;H01L43/02 |
主分类号 |
H01L43/10 |
代理机构 |
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代理人 |
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主权项 |
1. A magnetic random access memory device comprising a plurality of memory elements, each of said memory elements including a magnetic tunnel junction (MTJ) structure in between a non-magnetic seed layer and a non-magnetic cap layer, said MTJ structure comprising a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween, wherein said magnetic free layer structure has a variable magnetization direction substantially perpendicular to a layer plane thereof, said magnetic reference layer structure includes a first magnetic reference layer formed adjacent to said insulating tunnel junction layer and a second magnetic reference layer separated from said first magnetic reference layer by a first non-magnetic perpendicular enhancement layer, said first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof, said second magnetic reference layer having a multilayer structure comprising a first magnetic reference sublayer formed adjacent to said first non-magnetic perpendicular enhancement layer and a second magnetic reference sublayer separated from said first magnetic reference sublayer by an intermediate metallic layer. |
地址 |
Fremont CA US |