发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME
摘要 A light emitting device includes a first semiconductor layer of a first conductivity type having an upper and lower surface sides. A first portion of the first semiconductor layer is adjacent to a second portion of the first semiconductor layer. A light emitting layer is adjacent to the first portion on the under surface side. A second semiconductor layer of a second conductivity type is on the light emitting layer such that the light emitting layer is between the second semiconductor layer and the first portion. A first conductive layer electrically contacts the second portion of the first semiconductor layer on the under surface side and extends beyond an outer edge of the first semiconductor layer. A protecting layer comprising a metal is on an upper surface side of the first conductive layer. A pad electrode is on the upper surface side of the first conductive layer.
申请公布号 US2016211419(A1) 申请公布日期 2016.07.21
申请号 US201614994645 申请日期 2016.01.13
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 Kaga Koji;Katsuno Hiroshi;Sawano Masakazu;Oike Go;Miyabe Kazuyuki
分类号 H01L33/44;H01L33/40;H01L33/22;H01L33/32;H01L33/00;H01L33/06 主分类号 H01L33/44
代理机构 代理人
主权项 1. A semiconductor light emitting element, comprising: a first semiconductor layer of a first conductivity type and having an upper surface side and a under surface side, a first portion of the first semiconductor layer being adjacent to a second portion of the first semiconductor layer in a first direction; a light emitting layer adjacent to the first portion on the under surface side; a second semiconductor layer of a second conductivity type that is opposite to the first conductivity type, the light emitting layer being between the second semiconductor layer and the first portion; a first conductive layer electrically contacting the second portion of the first semiconductor layer on the under surface side, the first conductive layer extending beyond an outer edge of the first semiconductor layer in the first direction; a protecting layer on an upper surface side of the first conductive layer, the protecting layer comprising a metal; and a pad electrode on the upper surface side of the first conductive layer and electrically connected to the first conductive layer through the protecting layer.
地址 Tokyo JP