SEMICONDUCTOR DEVICE HAVING ASYMMETRIC FIN-SHAPED PATTERN

摘要

Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.

主权项

1. A semiconductor device, comprising:
a first fin-shaped pattern including first and second sidewalls facing one another; and a field insulating film contacting at least a portion of the first fin-shaped pattern, wherein the first fin-shaped pattern comprises:
a lower portion of the first fin-shaped pattern contacting the field insulating film;an upper portion of the first fin-shaped pattern not contacting the field insulating film;a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; anda first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern; and wherein the first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.