TRENCH LATERAL DIFFUSION METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

A trench lateral diffusion metal oxide semiconductor (LDMOS) device, disposed on a substrate, comprising: a transistor and an LDMOS transistor. The transistor has a gate. The LDMOS transistor has a trench gate, wherein the trench gate protrudes from a surface of the substrate. Electrical connection of the trench gate and a doping region due to a metal silicide may be prevented by protruding the trench gate from the surface of the substrate. And furthermore a step height difference between a gate and the trench gate may be decreased, and openings respectively exposing a top portion of the trench gate and a top portion of the gate may be formed without changing the manufacturing conditions.

主权项

1. A trench LDMOS device, disposed on a substrate, comprising:
a transistor, disposed on a first area of the substrate, the transistor comprising a gate; and a trench LDMOS transistor, disposed on a second area of the substrate, comprising:
a first well region, disposed in the second area of the substrate;a second well region, having a first conductivity type, disposed in the first well region;a trench gate, disposed in a trench of the substrate, wherein the trench gate protrudes from a surface of the substrate, and the trench is located in the second well region;a gate dielectric layer, disposed between the trench gate and the substrate;a first doped region, having the first conductivity type, disposed in the substrate at two sides of the trench gate; anda second doped region, having a second conductivity type, disposed in the substrate between the trench gate and the first doped region.