MODIFIED SELF-ALIGNED CONTACT PROCESS AND SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a transistor and a contact pad over a substrate. The transistor includes a high-k dielectric layer, a work function metal layer, a metal gate, two spacers, a metal compound, an insulator and a doped region. The high-k dielectric layer is over the substrate. The work function metal layer is over the high-k dielectric layer. The metal gate is over the work function metal layer. The two spacers sandwich the work function metal layer and the metal gate. The metal compound is over inner walls of the two spacers and over the top surface of the work function metal layer and the metal gate. The insulator covers the metal compound. The doped region is in the substrate. The contact pad is electrically connected to the metal gate.

主权项

1. A semiconductor device comprising:
a substrate having a transistor thereon, wherein the transistor comprises:
a high-k dielectric layer over the substrate;a work function metal layer over the high-k dielectric layer;a metal gate over the work function metal layer;two spacers sandwiching the work function metal layer and the metal gate;a metal compound over inner walls of the two spacers and over a top surface of the work function metal layer and the metal gate;an insulator covering the metal compound;a doped region in the substrate; and a contact pad electrically connected to the metal gate.