| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
A semiconductor device (100) includes: a substrate (11); a first thin film transistor (10A) supported on the substrate (11), the first thin film transistor (10A) having a first active region (13c) which mainly contains a crystalline silicon; and a second thin film transistor (10B) being supported on the substrate (11), the second thin film transistor (10B) having a second active region (17c) which mainly contains an oxide semiconductor having a crystalline portion. |
| 申请公布号 |
US2016247831(A1) |
申请公布日期 |
2016.08.25 |
| 申请号 |
US201415027724 |
申请日期 |
2014.08.15 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
MAKITA Naoki;TONE Satoru |
| 分类号 |
H01L27/12;H01L29/40 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate; a first thin film transistor supported on the substrate, the first thin film transistor having a first active region which mainly contains a crystalline silicon; and a second thin film transistor supported on the substrate, the second thin film transistor having a second active region which mainly contains an oxide semiconductor having a crystalline portion. |
| 地址 |
Osaka-shi, Osaka JP |
