| 摘要 |
PROBLEM TO BE SOLVED: To provide stable electric characteristic to a semiconductor device using an oxide semiconductor to achieve high reliability.SOLUTION: A semiconductor device has an oxide semiconductor film, a source electrode and a drain electrode which are electrically connected with the oxide semiconductor film, a metal oxide film which partially contacts the oxide semiconductor film, a gate insulation film formed on and in contact with the metal oxide film and a gate electrode on the gate insulation film. Since this can mitigate an impact of charge on the oxide semiconductor film, variation in a threshold value of a transistor caused by charge trap to an interface of the oxide semiconductor film can be inhibited.SELECTED DRAWING: Figure 1 |
