Semiconductor device having stressor and method of fabricating the same

摘要

A semiconductor device may include a fin active region including a lower fin active region surrounded by a device isolation layer and an upper fin active region protruding from a top surface of the device isolation layer, a gate pattern disposed on top and side surfaces of the upper fin active region, and a source/drain region formed in the fin active region located at a side of the gate pattern. The gate pattern extends onto the device isolation region. The source/drain region includes a trench and epitaxial layers that fill the trench. Sidewalls of the trench include first sidewalls and second sidewalls that connect the first sidewalls to a bottom surface of the trench. The bottom surface of the trench is located at a lower level than the top surface of the device isolation layer beneath the gate pattern, and the second sidewalls of the trench have inclined {111} planes.

主权项

1. A semiconductor device comprising:
a fin active region including a lower fin active region surrounded by a device isolation layer and an upper fin active region that protrudes from a top surface of the device isolation layer; a gate pattern on top and side surfaces of the upper fin active region, and extending above the device isolation layer; and a source/drain region in the fin active region at a side of the gate pattern, wherein the source/drain region includes a trench and epitaxial layers filling the trench,
wherein the trench includes a bottom surface and sidewalls,
wherein the sidewalls include first sidewalls and second sidewalls, the second sidewalls connecting the first sidewalls to the bottom surface,the bottom surface of the trench at a lower level than the top surface of the device isolation layer under the gate pattern, andthe second sidewalls of the trench have inclined {111} planes.