| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation method of a semiconductor substrate capable of measuring the interface state density from a sub-threshold current, while simplifying the evaluation structure manufacturing process.SOLUTION: An evaluation method of a semiconductor substrate by interface state density measurement of the interface between a semiconductor and an insulating film includes a step for forming an insulating film on a first conductivity type semiconductor substrate, a step for removing a part of the insulating film, a step for forming a second conductivity type first diffusion layer, and a second conductivity type second diffusion layer, separated from the first diffusion layer by the insulating film, in a region not covered with the insulating film, a step for forming a second conductivity type channel directly under the insulating film, by placing charges of a predetermined charge surface density on the insulating film by corona charge, a step for measuring the value of a current flowing between the first diffusion layer and second diffusion layer via the channel, and a step for calculating the interface state density based on the relationship of the current value and charge surface density. |
