| 发明名称 |
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE |
| 摘要 |
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a cap element over the gate stack. The cap element has an upper portion and a lower portion, and the upper portion is wider than the lower portion. The semiconductor device structure also includes a spacer element over a sidewall of the cap element and a sidewall of the gate stack. |
| 申请公布号 |
US2016343827(A1) |
申请公布日期 |
2016.11.24 |
| 申请号 |
US201514818965 |
申请日期 |
2015.08.05 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd |
发明人 |
WU Po-Chi;CHANG Chai-Wei;CHANG Kuo-Hui;CHAO Yi-Cheng |
| 分类号 |
H01L29/66;H01L29/423;H01L29/78;H01L21/283;H01L21/306 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device structure, comprising:
a gate stack over a semiconductor substrate; a cap element over the gate stack, wherein the cap element has an upper portion and a lower portion, and the upper portion is wider than the lower portion; and a spacer element over a sidewall of the cap element and a sidewall of the gate stack. |
| 地址 |
Hsin-Chu TW |
