INTERCONNECT STRUCTURE WITH IMPROVED CONDUCTIVE PROPERTIES AND ASSOCIATED SYSTEMS AND METHODS

摘要

Interconnect structures with improved conductive properties are disclosed herein. In one embodiment, an interconnect structure can include a first conductive member coupled to a first semiconductor die and a second conductive member coupled to second semiconductor die. The first conductive member includes a recessed surface defining a depression. The second conductive member extends at least partially into the depression of the first conductive member. A bond material within the depression can at least partially encapsulate the second conductive member and thereby bond the second conductive member to the first conductive member.

主权项

1. A method of forming a semiconductor die assembly, comprising:
inserting at least a portion of a plurality of first conductive members on a first semiconductor die into at least a portion of a plurality of depressions in corresponding second conductive members on a second semiconductor die; and covering at least a portion of each of the first conductive members with a bond material within a depression located in each of the corresponding second conductive members.