Material and Process for Copper Barrier Layer

摘要

A method of fabricating a semiconductor device comprises forming a first dielectric material layer on a semiconductor substrate. The first dielectric material layer is patterned to form a plurality of vias therein. A metal layer is formed on the first dielectric material layer, wherein the metal layer fills the plurality of vias. The metal layer is etched such that portions of the metal layer above the first dielectric material layer are patterned to form a plurality of metal features aligned with the plurality of vias respectively. A self-assembled monolayer film is formed on surfaces of the plurality of metal features.

主权项

1. A semiconductor structure comprising:
a first low-k dielectric material layer disposed on a semiconductor substrate; first copper alloy features embedded in the first low-k dielectric material layer; a barrier layer surrounding the first copper alloy features and interposed between the first low-k dielectric material layer and the first copper alloy features; a second low-k dielectric material layer disposed on the first low-k dielectric material layer; second copper alloy features embedded in the second low-k dielectric material layer; and a self-assembled monolayer film surrounding the second copper alloy features and interposed between the second low-k dielectric material layer and the second copper alloy features.