发明名称 Encapsulation structure provided with a cap and a substrate to connect at least one nano-object onto a face of the substrate and to resume contact through the cap and method of manufacturing the structure
摘要 This structure, that is applicable particularly to manufacturing of <<Beyond CMOS>> type systems comprises a substrate (74) with opposite first and second faces, a cap (80) with opposite first and second faces, the first face of the cap being fixed to the first face of the substrate, at least one cavity (86) defined between the cap and the substrate, at least one nano-object (72) in the cavity, and first doped zones (88, 90) that are formed in the substrate, on the first face of the substrate, the nano-object being electrically connected to the first doped zones. According to the invention, the structure also comprises second doped zones (92, 96) that are formed in the cap, on the first face of the cap and that are at least partially in direct contact with the first doped zones, and means of making contact (96, 98) between the first and the second face of the cap and that open up on the second doped zones.
申请公布号 US9511992(B2) 申请公布日期 2016.12.06
申请号 US201514857047 申请日期 2015.09.17
申请人 Commissariat a l'energie atomique et aux energies alternatives 发明人 Baillin Xavier
分类号 H01L23/48;B81B7/00;B81C1/00 主分类号 H01L23/48
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. Structure for encapsulation of at least one nano-object comprising: a substrate with opposite first and second faces, a cap with opposite first and second faces, the first face of the cap being fixed to the first face of the substrate, at least one cavity defined between the cap and the substrate, at least one nano-object in the cavity, and first doped zones that are in the substrate on the first face of the substrate, the nano-object being electrically connected to at least two of said first doped zones, second doped zones that are in the cap on the first face of the cap and that are electrically connected to the first doped zones, and means of making contact that range from the second face to the first face of the cap and that open up on the second doped zones, these means being electrically connected to these said second zones.
地址 Paris FR