| 发明名称 | Composition for forming P-type diffusion layer, method of forming P-type diffusion layer, and method of producing photovoltaic cell | ||
| 摘要 | The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment. | ||
| 申请公布号 | US9520529(B2) | 申请公布日期 | 2016.12.13 |
| 申请号 | US201314076212 | 申请日期 | 2013.11.09 |
| 申请人 | Hitachi Chemical Co., Ltd. | 发明人 | Machii Yoichi;Yoshida Masato;Nojiri Takeshi;Okaniwa Kaoru;Iwamuro Mitsunori;Adachi Shuichiro;Sato Tetsuya;Kizawa Keiko |
| 分类号 | H01L21/00;H01L31/18;C03C8/16;C03C8/18;H01L21/22;H01L21/225;H01L31/032;H01L31/0224 | 主分类号 | H01L21/00 |
| 代理机构 | Seyfarth Shaw LLP | 代理人 | Seyfarth Shaw LLP |
| 主权项 | 1. A method of forming a p-type diffusion layer, the method comprising: providing a composition for forming a p-type diffusion layer, the composition comprising a glass powder and a dispersion medium, wherein the glass powder has a diameter of 10 μm or less and includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less; applying the composition for forming a p-type diffusion layer to a semiconductor substrate; and conducting a thermal diffusion treatment to diffuse the acceptor element into the semiconductor substrate. | ||
| 地址 | Tokyo JP | ||