Electronic device including a capacitor structure and a process of forming the same

摘要

An electronic device can include a capacitor structure. In an embodiment, the electronic device can include a buried conductive region, a semiconductor layer having a primary surface, a horizontally-oriented doped region adjacent to the primary surface, an insulating layer overlying the horizontally-oriented doped region, and a conductive electrode overlying the insulating layer. The capacitor structure can include a first capacitor electrode including a vertical conductive region electrically connected to the horizontally-oriented doped region and the buried conductive region. The capacitor structure can further include a capacitor dielectric layer and a second capacitor electrode within a trench. The capacitor structure can be spaced apart from the conductive electrode. In another embodiment, an electronic device can include a first transistor, a trench capacitor structure, and a second transistor, wherein the first transistor is coupled to the trench capacitor structure, and the second transistor does not have a corresponding trench capacitor structure.

主权项

1. An electronic device comprising:
a buried conductive region; a semiconductor layer having a primary surface and an opposing surface, wherein the buried conductive region is disposed closer to the opposing surface than to the primary surface, and the semiconductor layer defines a first trench having a sidewall and being adjacent to the primary surface and extending toward the buried conductive region; a first horizontally-oriented doped region adjacent to the primary surface, wherein the first horizontally-oriented doped region is at least part of a drain region or a collector of a first transistor structure; a first insulating layer overlying the first horizontally-oriented doped region; a conductive electrode overlying the first insulating layer; a first capacitor structure including:
a first capacitor electrode including a first vertical conductive region adjacent to the sidewall of the first trench and extending toward the buried conductive region, wherein the vertical conductive region is electrically connected to the first horizontally-oriented doped region and the buried conductive region;a capacitor dielectric layer; anda second capacitor electrode within the first trench, wherein the first capacitor structure is spaced apart from and does not underlie the conductive electrode, and wherein the electronic device comprises a power transistor.