Silicon carbide epitaxy

摘要

A method comprises providing a monocrystalline silicon wafer (11) having a principal surface (17) which supports a masking layer (24), for example silicon dioxide or polycrystalline silicon, having windows (25) to expose corresponding regions of the silicon wafer, forming silicon carbide seed regions (30) on the exposed regions of the wafer, for example by forming carbon and converting the carbon into silicon carbide, and growing monocrystalline silicon carbide (31) on the silicon carbide seed regions. Thus, monocrystalline silicon carbide can be formed selectively on the silicon wafer which can help to avoid wafer bow.

主权项

1. A method, comprising:
providing a monocrystalline silicon wafer having a principal surface which supports a masking layer having windows which expose corresponding regions of the silicon wafer; forming silicon carbide seed regions on the exposed regions of the wafer; consuming fully the masking layer at an elevated temperature; growing monocrystalline silicon carbide on the silicon carbide seed regions; and forming regions of polycrystalline and/or amorphous silicon carbide between the monocrystalline silicon carbide layers on the silicon wafer.