| 摘要 |
PURPOSE:To improve alignment accuracy between a photo mask and a semiconductor mask by performing alignment of patterning being based on this second alignment mark by forming a second alignment mark on a second alignment mark on a photoresist film formed on this semiconductor wafer being based on a first alignment mark formed on the semiconductor wafer. CONSTITUTION:A resist pattern is formed being based on a first alignment mark 7a. Then, a second circuit pattern is wired on a first resist film 10 by an upper metal 11. Then, a second resist film 12 is applied to the entire surface by spin coating and resist pattern is formed being based on a second alignment mark 10a. Since this alignment mark 10a is formed at the upper part from the semiconductor wafer, a signal which is stronger than that from the first alignment mark 7a can be receiving by a photo detector. Thus, the resist film can be formed accurately at a specified position. |
