Method of manufacturing ferroelectric MOSFET sensors

摘要

A method of manufacturing ferroelectric sensors having piezoelectric and pyroelectric properties are provided. These sensors include a semiconductor transistor having a gate and a surface layered with an integral film comprising a substantially poled ferroelectric polymer. The integral film is electrically connected to ground or a voltage source and to the gate of the semiconductor transistor. The preferred integral film is deposited on the semiconductor transistor using spin coating techniques. Extremely sensitive acoustic imaging sensors and the like can be produced in accordance with the invention which have high voltage sensitivity and better acoustic impedance match with body tissues and water.