发明名称 Small size sputtering target and high vacuum sputtering apparatus using the same
摘要 A high vacuum sputtering apparatus comprising a vacuum chamber in which a substrate to be processed and a small size sputtering target having an outer diameter less than one and a half times the diameter of the substrate and an area inclined toward the outer periphery thereof on the surface disposed opposite to the substrate are oppositely disposed, and the internal pressure of the vacuum chamber is maintained at less than 1x10-3 Torr for sputtering, thereby obtaining an improved distribution of film thickness and an enhanced coverage symmetry for sputtering./!
申请公布号 US5753090(A) 申请公布日期 1998.05.19
申请号 US19960679219 申请日期 1996.07.12
申请人 NIHON SHINKU GIJUTSU KABUSHIKI KAISHA 发明人 OBINATA, HISAHARU
分类号 C23C14/34;C23C14/35;H01L21/203;H01L21/285;(IPC1-7):C23C14/34 主分类号 C23C14/34
代理机构 代理人
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