| 摘要 |
<P>PROBLEM TO BE SOLVED: To elevate the radiative performance of a transfer-mold semiconductor device for electric power without changing its whole size. <P>SOLUTION: The semiconductor device includes a metal block 4 having a first principal surface 16 and a second principal surface 18, recesses (20, 22, 24) formed on the first principal surface 16, a semiconductor element 6 fixed on the metal block 4 inside the recess, a first insulating layer 38 covering the first principal surface 16 in contact with the first principal surface 16, and a second insulating layer 38 covering the second principal surface 18 in contact with the second principal surface 18. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
